Abstract the energies of atomic processes in resistive random access memories rram are calculated for four typical oxides, hfo2, tio2, ta2o5 and al2o3, to define a materials selection. Oct 23, 2014 stanford university resistiveswitching random access memory rram veriloga model 1. Apr 16, 2019 resistive random access memory rram 1,2,3,4,5,6,7,8,9,10,11,12,14,15,16,17,18,19,20,21,22,23 is the highly promising candidate for the next generation nonvolatile memory nvm, because. Resistive switching random access memory materials. Materials selection for oxidebased resistive random access memories yuzheng guo and john robertson engineering dept, cambridge university, cambridge cb2 1pz, uk. Professor wei lu, chair assistant professor emmanouil kioupakis. The global magneto resistive ram mram market is expected to reach usd 4.
Stanford university resistiveswitching random access memory rram veriloga model 1. Design of selectorbased insulatormetal transition model. With present age computing being more and more data driven, there has. Request pdf resistive random access memory rram rram technology has made significant progress in the past decade as a competitive candidate for. Abstract this study demonstrates a synergistic approach of dual nanostructure engineering to improve the performance of alox. Resistive random access memory an overview sciencedirect. This lecture is a comprehensive tutorial of metal oxidebased rram technology from device fabrication to array architecture design. The information storage in rram is realized by the resistive. Resistive random access memory rram is a promising candidate for next generation data storage due to its potential for performance, scalability and compatibility with cmos processing.
Stanford university resistiveswitching random access memory. A finite element model for bipolar resistive random access memory kwanyong kim, kwangseok lee, keunho lee, youngkwan park, and woo young choi abstractthe forming, reset and set operation of bipolar resistive random access memory rram have been predicted by using a finite element fe model which includes interface effects. Resistive switching random access memory materials, device, interconnects, and scaling considerations abstract. A oneselectoroneresistor cell for a 3d crossbar array composed of this selector and a tintio 2 tin bipolar resistive random access memory rram in series was modeled using the comsol finite element multiphysics software. Radiationinduced effects on hfoxbased resistive random. It is under development by a number of companies, and some have already patented their own versions of the technology. A parameterized spice macromodel of resistive random. Both metallic and semiconducting cnts effectively switch alox bits between memory states with high and low resistance. Effects of electrodes on the switching behavior of. Resistive random access memory rramreram is a new type of memory designed to be nonvolatile. In this work, we provide a comprehensive discussion on the various models proposed for the design and description of resistive random access memory rram, being a nascent technology is heavily reliant on accurate models to develop efficient working designs and standardize its implementation across devices. Aug 19, 2019 in this study, a nbo 2based selector was designed that can change high resistance states to low resistance states due to the insulatormetal transition imt. A driver circuit selects the word line at a first time subsequent to the bit line being charged to the first voltage.
A finite element model for bipolar resistive random access. Characterization of highly resistive nanoscale rram contacts. Glucosebased resistive random access memory for transient. The memory operates by changing the resistance of special dielectric material called a memresistor memory resistor whose. Resistive randomaccess memory an overview sciencedirect. Resistive random access memory rram has become one of the most promising candidates for the nextgeneration memory 314 because of the intrinsic excellent scalability, simple metalinsulatormetal mim structure, low fabrication cost, 3d integration feasibility, and promising performances in speed, power, endurance, retention, etc. An overview of resistive random access memory devices.
Relevant performance parameters of rram devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and. Philippe blaise, in advances in nonvolatile memory and storage technology second edition, 2019. One or more example embodiments provide a resistive random access memory rram, which may include a switch region formed of a material having bipolar properties, and a memory resistor formed of a material having unipolar properties. Resistive random access memory rram isbn 9781627059299 pdf. A resistive random access memory rram includes a switch region formed of a material having bipolar properties. Resistive random access memory rram synthesis lectures. Temperature induced complementary switching in titanium. We use singlewalled carbon nanotube cnt crossbar electrodes to probe sub5 nm memory domains of thin alox films. Resistive random access memory rram has been regarded as a candidate for next generation nonvolatile memory 4,5 nvm due to its low cost, low power consumption, high stability and high switching speed. The resistive random access memory rram device has been widely studied due to its excellent memory characteristics and great application potential in different fields. Among these devices concepts rram is a prime candidate because of its unique characteristics. Feram, and resistive random access memory rram have been introduced and studied.
The lowresistance state scales linearly with cnt series resistance down to. Resistive random access memory rram synthesis lectures on. Resistive random access memory rram research interest into these emerging devices heightened because the nonvolatile memristive behavior demonstrated could be harnessed into nonvolatile memory. In this study, a simple, reliable, and universal circuit model of bipolar resistive switching random access memory rram is presented for the circuitlevel simulation of a highdensity crosspoint rram array. Collectively, our results show that monitoring the oxygen movement by raman spectroscopy for a resistive random access memory rram is made possible by inserting a singlelayer graphene at electrodeoxide interface. A collective study on modeling and simulation of resistive.
Zizhen jiang analysis on resistive random access memory rram. This lecture, isbn 9781627059299 buy the resistive random access memory rram ebook. Resistive random access memory reram or rram is a type of nonvolatile nv random access ram computer memory that works by changing the resistance across a dielectric solidstate material, often referred to as a memristor. Resistive random access memory and its applications in. A comparator compares a second voltage on the bit line to a. The fabricated glucosebased rram showed bipolar switching behavior with stable endurance 100 cycles and retention 104 seconds characteristics, without. Emerging nonvolatile memory technologies are promising due to their anticipated capacity benefits, nonvolatility, and zero idle energy. Circuitlevel simulation of resistiveswitching random. Nonvolatile memories, such as mram and resistive random access memory rramreram, are expected to replace the existing volatile memories such as dynamic random access memory dram and static randomaccess memory static ram or.
An increase in the resistance of the highresistance state hrs of the rram. They are being seen as potential alternatives of the flash memory technology. Materials selection for oxidebased resistive random access. Furthermore, an rram device also has the advantage of having a simple structure, which is generally composed of a metal. Reram, or resistive memory cells, is a type of nonvolatile memory that shares some similarities with phase change memory as both are considered to be types of memristor technologies reram, also called rram resistive random access memory, is considered to be a type of memristor technology a passive twoterminal electronic device that is designed to express only the property of an. Resistive switching memory and reconfigurable devices by jiantao zhou a dissertation submitted in partial fulfillment of the requirements for the degree of doctor of philosophy electrical engineering in the university of michigan 2016 doctoral committee. Resistive random access memory rram with the advantages of nonvolatile, low power consumption, and having a cmoscompatible process have been attracted in various emerging data storage devices. Pdf with recent progress in material science, resistive random access memory rram devices have attracted interest for nonvolatile, lowpower. The twoterminal rram model has the features of 1 initial condition settings of high resistance state hrs or low resistance state lrs 2 a forming behavior option p dctransient mode selection 4. Tsai2 1department of electrical engineering and graduate institute of electronics engineering, national taiwan university, taiwan, r.
A random access memory ram can be either volatile or nonvolatile. Bifeo3 based resistive random access memory rram devices are fabricated using a lowcost solution process to study the effect of an al top electrode on switching behavior and reliability. In this paper, resistive switching materials, switching mechanism, and memory characteristics of rram are discussed. Because conventional nonvolatile memory is limited by process technology and physical size, resistive random access memory rram gradually enters the field of view due to its simple structure, fast programerase speed, low power consumption, and so on. Resistive random access memory enabled by carbon nanotube. With recent progress in material science, resistive random access memory rram devices have attracted interest for nonvolatile, lowpower, nondestructive readout, and highdensity memories. In this study, a nbo 2based selector was designed that can change high resistance states to low resistance states due to the insulatormetal transition imt. Resistive random access memory rram has shown great potential as a leading candidate for nextgeneration nonvolatile memory technology. Design of selectorbased insulatormetal transition model for. Complementary resistive switching in tantalum oxidebased. This technology bears some similarities to conductivebridging ram cbram, and phasechange memory pcm.
Jan 11, 2017 resistive random access memory rram reram is a new type of memory designed to be nonvolatile. Oct 26, 2015 resistive random access memory rram has become one of the most promising candidates for the nextgeneration memory 314 because of the intrinsic excellent scalability, simple metalinsulatormetal mim structure, low fabrication cost, 3d integration feasibility, and promising performances in speed, power, endurance, retention, etc. In this research paper, the revolution of reram will be analyzed. Systems and methods for reading resistive random access memory rram cells pctus2064811 wo2014062558a1 en 20121015. Rram technology has made significant progress in the past decade as a competitive candidate for the next generation nonvolatile memory nvm. Reram, also called rram resistive random access memory, is considered to be a type of memristor technology a passive twoterminal electronic device that is designed to express only the property of an electronic component that lets it recall the last resistance it had before being shut off memristance. Traditional resistive random access memory rram is a metalinsulatormetal mim structure, in which metal oxide is usually used as an. Resistive random access memory rram 1,2,3,4,5,6,7,8,9,10,11,12,14,15,16,17,18,19,20,21,22,23 is the highly promising candidate for the next generation nonvolatile memory nvm, because. Monitoring oxygen movement by raman spectroscopy of resistive. In this study, a simple, reliable, and universal circuit model of bipolar resistiveswitching randomaccess memory rram is presented for the circuitlevel simulation of a highdensity crosspoint rram array. In order for rram technology to be adopted for manufacturing, the technology must meet the following requirements. The rram further includes a lower electrode formed below the switch region. A parameterized spice macromodel of resistive random acess memory rram is demonstrated to simulate the memory chip.
Displacement damage resulting in oxygen vacancies, followed by annealing from neutron irradiation and some selfforming of the rram cells was observed. In addition, the inserted slg enables the reduction of reset current by 22 times and programming power consumption by 47 times. A system including a resistive random access memory cell connected to a word line and a bit line and a precharge circuit configured to precharge the bit line to a first voltage with the word line being unselected. Detailed operational and switching characteristics for metaloxide resistive random access memory rram are presented, along with materialsvacancy engineering ramifications for the switching operations.
One of the most promising candidates is resistive random access memory rram based on resistive switching rs. Resistive random access memory rram semantic scholar. Circuitlevel simulation of resistiveswitching randomaccess. Pdf an overview of resistive random access memory devices.
Monitoring oxygen movement by raman spectroscopy of. Fundamentals of metaloxide resistive random access memory. Increasing dependence of the functionality and performance of computing system on the characteristics of the memory subsystem calls for further study on various memory. Introduction lorem ipsum dolor sit amet, consectetur adipiscing elit. A parameterized spice macromodel of resistive random access. Schematic of resistive switching rs in rram for a electrochemical cationbased rs set, b electrochemical. Stanford university resistiveswitching random access. Rram technology has made significant progress in the past decade as a competitive candidate for the. Observing topotactic phase transformation and resistive.
Several emerging nonvolatile memory nvm technologies have been pursued toward to achieving part of these ideal characteristics. Fundamentals of metaloxide resistive random access memory rram. Conductance quantization in resistive random access memory. Resistive random access memory rram is based on the reversible formationdisruption of a conductive filament in a resistive layer providing a low and a highresistance states.
Nonvolatile memories, such as mram and resistive random access memory rramreram, are expected to replace the existing volatile memories such as dynamic random access memory dram and static randomaccess memory static ram or sram. Resistive random access memory rram is one of the promising candidates for nvm applications because of its superior properties, such as reversible resistive switching, simple structure, small size, low power consumption, high operation speed, and low. The rram device also exhibits rich electrical, thermal, magnetic, and optical effects, in close correlation with the abundant resistive switching rs materials, metaloxide interface, and multiple rs mechanisms including the. The emerging nvm candidates are spintransfertorque magnetoresistive random access memory sttmram 2, phase change random access memory pcram 3, and resistive random access memory rram 4. The switching of metal oxide films hfox, tiox, alox has been studied 1 and several mechanisms proposed for the formation of low resistance pathways of such. Rram, reram, resistive switching, nonvolatile memory. An overview of resistive random access memory devices core.
All nonmetal resistive random access memory scientific. This type of rram is wellknown in conductive bridge ram cbram. Layer 1 is a silicon substrate, layers 2 and 5 are platinum electrodes, layer 3 is a dielectric oxide e. An overview of resistive random access memory devices pdf. Resistive switching random access memory materials, device. A parameterized spice macromodel of resistive random access memory and circuit demonstration huanlin chang1, hsuanchih li1, c. A oneselectoroneresistor cell for a 3d crossbar array composed of this selector and a tintio 2 tin bipolar resistive random access memory rram in series was modeled using the comsol finite element multiphysics software package. First, a brief overview of the field of emerging memory. All nonmetal resistive random access memory scientific reports.
The considered platform includes all the involved physical mechanisms i. Resistive randomaccess memory reram technology has been viewed as one of the most reliable nonvolatile memories that have are emerging in markets. Among the several emerging memory, resistive random access memory rram based on the resistive switching rs effect taking place in metalinsulatormetal mim cells, has attracted renowned interests as a promising next generation nonvolatile memory owing to its simple constituents, high speed operation, nondestructive readout, low operation. Us20140104926a1 systems and methods for reading resistive. Resistive random access memory rram is based on the reversible formation disruption of a conductive filament in a resistive layer providing a low and a. Materials selection for oxidebased resistive random. Systems and methods for reading resistive random access memory rram cells cn2080053672. A resistiveswitching memory cell in an rram is generally composed of an. In this research, glucose was adopted as the switching layer of resistive random access memory rram for transient electronics. Zizhen jiang analysis on resistive random access memory. A volatile memory loses stored data when power is removed, which is the case for dynamic random access memory dram and static random access memory sram.